Author : MeghaShrivastava 1
Date of Publication :20th June 2016
Abstract: N- type Porous Silicon(Porous-Si) has been fabricated using electrochemical anodization etching technique in presence of room light. The formation of pores and crystallinity of Porous layer is confirmed through XRD investigation. PL measurements reveals the blue luminescence of P-Si layer formed. FTIR results authenticate the presence of Si-O-Si and Si-H bends which could be one of the reason for blueluminescence
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