Open Access Journal

ISSN : 2456-1304 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Science Engineering and Management (IJSEM)

Monthly Journal for Science Engineering and Management

ISSN : 2456-1304 (Online)

Room Light Anodization of N-Type Silicon and Study of Its Photoluminescence

Author : MeghaShrivastava 1 ReetaKumari 2 Fozia Z. Haque 3

Date of Publication :20th June 2016

Abstract: N- type Porous Silicon(Porous-Si) has been fabricated using electrochemical anodization etching technique in presence of room light. The formation of pores and crystallinity of Porous layer is confirmed through XRD investigation. PL measurements reveals the blue luminescence of P-Si layer formed. FTIR results authenticate the presence of Si-O-Si and Si-H bends which could be one of the reason for blueluminescence

Reference :

    1. O. Bisi, Stefano Ossicini, L. Pavesi, Surface Science Reports 38 (2000) 1-126.
    2.  SafakDogan, MehmanSirinov, CerenBaskose, Nihan Akin, TarikAsar, EmrePiskin, TofigMemmedli and SuleymanOzcelik, Journal of Materials Science and Engineering A 3 (9) (2013)609-614.
    3. M Das & D Sarkar, Indian Journal of Pure &Applied Physics Vol. 51, October 2013, pp. 724-727.
    4. M. K. Lee and K. R. Peng, Applied Physics Letters 62, 3159 (1993); doi: 10.1063/1.109114.
    5. Raheem G. kadhim, Raid A. Ismail and Wasna’a M. Abdulridha, Int. J. Thin. Fil.Sci. Tec. 4, No. 3, 199-203 (2015).
    6. Yunsen Zhang, Zhimei Yang, Donglai Liu, EryongNie, XueBai, Zhiwei Li, Huabing Song, Yu Zhou, Wenyu Li, Min Gong, and Xiaosong Sun, Journal of Luminescence 130 (2010)1005-1010.
    7. Ruchi Nandanwar 1 , Purnima Singh 1 Fozia Z. Haque 2* American Chemical Science Journal 5(1): 1-10, 2015; DOI: 10.9734/ACSJ/2015/10875

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