Open Access Journal

ISSN : 2456-1304 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Science Engineering and Management (IJSEM)

Monthly Journal for Science Engineering and Management

ISSN : 2456-1304 (Online)

Effect of Ultrasonic stress in Semiconductor Materials and Devices

Author : Awadhesh Prasad 1

Date of Publication :21st December 2016

Abstract: Effect of Ultrasonic Stress in solid state devices and materials have been discussed with the help of electromagnetic wave theory. Ultrasonic stress (radiation pressure) changes the characteristics of solid state devices and materials. Analytical treatment of changed characteristics of solid state devices and materials have been discussed.

Reference :

    1. V. R. Singh and Awadhesh Prasad, “Effect of Ultrasonic stress on the sensitivity of Silicon Strain devices and application to acoustic power measurement” Sensors and Actuators A. Netherlands, Vol. 28, pp 7 – 11, 1991.
    2. V. R. Singh and Awadhesh Prasad, “Effect of Ultrasonic Stress on Amplification of an Operational Amplifier Device”, Applied Acoustics, UK, Vol 27, pp 69 – 73, 1989.
    3. V. R. Singh and Awadhesh Prasad, “Acoustoelectric Effect in semiconductor materials Devices”, Chinese Journal of Acoustics, Vol. 9, No. 3, pp 275 – 279, 1990.
    4. V. R. Singh, Awadhesh Prasad and Sanjay Yadav, “Ultrasonic Stress Effect on a Germanium Based Junction Transistor”, Acustica, Great Britain, Vol. 71, pp 79 – 80, 1990.
    5. Awadhesh Prasad and V. R. Singh, “Characteristics of Silicon Laser p-i-n photodiodes in Ultrasonic Field”, IETE, New Delhi, Technical Review, Vol. 7, No. 1, pp 64 – 65, 1990.
    6. V. R. Singh and Awadhesh Prasad, “Technical Note: Effect of Ultrasonic Stress on offset voltage of operational Amplifier Devices”, Noise control Engineering Journal, USA, Vol. 35 No.2, pp 65 – 67.
    7.  V. R. Singh and Awadhesh Prasad, “Effect of Ultrasonic Stress on the N-Type Silicon Photodiodoes”, ITBM, France, Vol. 10 No, pp 567-571, 1989.

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