Date of Publication :14th February 2017
Abstract: Acoustoelectric effect is the appearance of a dc electric current, when an acoustic wave passes through a conducting medium. This paper reviews the study of Ultrasonic stress on the semiconductor materials and devices used in various scientific and other measurements. A historical review of earlier findings is also reported with special reference to associated mechanisms. Ultrasonic stress studies in solid state devices require further attention and the work done in this area is also discussed. Different kinds of the mechanism, interpretation responsible for the change in the characteristics of the solid state devices and materials have been discussed. Ultrasonic stress produces a pressure effect on a target object placed in the ultrasonic field. Ultrasonic wave may be regarded as a coherent beam of phonons, absorbed in front of the material. In terms of the charge carriers, an electron hole pair is created due to the Ultrasonic field.
Reference :
-
- V. R. Singh and Awadhesh Prasad, “Effect of Ultrasonic stress on the sensitivity of Silicon Strain devices and application to acoustic power measurement” Sensors and Actuators A., Elsevier Squoia, Lausanne, Netherlands, Vol. 28, pp 7 – 11, 1991.
- V. R. Singh and Awadhesh Prasad, “Effect of Ultrasonic Stress on Amplification of an Operational Amplifier Device”, Applied Acoustics, UK, Vol 27, pp 69 – 73, 1989.
- V. R. Singh and Awadhesh Prasad, “Acoustoelectric Effect in semiconductor materials and devices”, Chinese Journal of Acoustics, Vol. 9, No. 3, pp 275 – 279, 1990.
- V. R. Singh, Awadhesh Prasad and Sanjay Yadav, “Ultrasonic Stress Effect on a Germanium Based Junction Transistor”, Acustica, Great Britain, Vol. 71, pp 79 – 80, 1990.
- Awadhesh Prasad and V. R. Singh, “Characteristics of Silicon Laser p-i-n photodiodes in Ultrasonic Field”, IETE, New Delhi, Technical Review, Vol. 7, No. 1, pp 64 – 65, 1990.