Date of Publication :24th July 2023

Abstract: This paper present the simulation study of irradiation of 150 keV energy ions of He, Ne, Ar and Xe on Bismuth Telluride(Bi2Te3) as target material. The simulation software SRIM and TRIM -2013 is used for this study. For this study, we simulated 5000 ions of energy 150 keV on Bismuth Telluride monolayer target. Bismuth Telluride is one of most important thermoelectric (TE) material and extensively used in TE based devices. In this study, ion range, lateral range distribution, ionization and energy loss were simulated and graphically presented. Using vacancy created by ions, displacement per atom (dpa) is estimated. The result shows as the ion becomes heavier, the percentage of energy loss through ionization decreases and to recoil gradually increases. The incident energy (150keV) loss for He ions was maximum of about 95.93% whereas for Xe ion it was least around 8.23% due to ionization process. The mean projected range was found to be maximum for He ion of 589.2 ± 189.7 nm and minimum for Xe ions 44.8 ± 24.1 nm. The skewness was found to be positive for all ions except for He ions which was found to be negative. The dpa was calculated for different fluences and for He, Ne, Ar and Xe, it is found to be 0.04, 11.72, 29.94209 and 161.66 respectively for the dose 1 × 1016 ions/cm2.

Reference :